Gallium Oxide

Gallium(III) oxide.pdf

Gallium Oxide Ga2O3 99.99%.pdf

Gallium Oxide Ga2O3 99.999%.pdf

Gallium oxide is an oxide of the metal gallium and is also a semiconductor compound. Up to now, its crystalline forms have been confirmed to include five types: α, β, γ, δ and ε, among which the β structure is the most stable. Most of the research related to the crystalline growth and physical properties of gallium oxide focuses on the β structure. Researchers have attempted to fabricate metal-semiconductor field-effect transistors. Although they are of a simple structure without a protective or passivation film formed, the samples have already demonstrated the characteristics of high withstand voltage and low leakage current. When manufacturing components of the same structure using silicon carbide and gallium nitride, it is usually difficult to meet the indicators of these samples.

The mainstream methods for preparing gallium oxide: According to the different states of raw materials during the crystal growth process of β-Ga2O3, the crystal growth methods can be classified as: solution method, melt method, gas phase method, solid phase method, etc. The melt method is the earliest studied and most widely applied crystal growth method, and it is also the commonly used method for growing β-Ga2O3 bulk single crystals at present. High-quality and low-cost β-Ga2O3 bulk single crystals can be grown through the melt method. Among them, the two most commonly used growth methods mainly include the pulling method and the mold guiding method.